Materials Technology Reports

In this study, Zr-doped HfO₂ (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO₂ and ZrO₂ cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~10³ A, and as well as good endurance (300 cycles) and retention (>10³ s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

Only a few nanomedicines have entered clinical application after over a decade and billions of dollars of investments in nanoscience and nanotechnology around the world. So, what lower the development of nanodrug? Recently, at our recent Editorial and Editorial Advisory Board meeting, we asked ourselves to address these questions and accelerate the development of nano pharmaceuticals. We will work with leaders in the area of drug supply to share our experiences and compare efforts around the world.